My order
Share to:  
Location:Home > Stock Inventory > Product Details

TP2105K1 MOSFET P-Channel -50V -160mA 6ohm SOT-23 marking P1LB no secondary breakdown high input impedance high gain

Hot selling goods

Product description
最大源漏极电压Vds
Drain-Source Voltage
-50V
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V
最大漏极电流Id
Drain Current
-160mA/-0.16A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
6Ω @-500mA,-10V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-1.0--2.0V
耗散功率Pd
Power Dissipation
360mW/0.36W
Description & ApplicationsFeatures Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-channel devices
描述与应用无二次击穿 低功率驱动器的要求 易于并联 低连续供墨系统和快速开关速度 优良的热稳定性 积分源漏二极管 高输入阻抗,高增益 互补N和P沟道器件
List of related models

Record / license number:粤ICP备14038557号 Copyright ©: 2018 Eric Online Store Copyright ownership and reservation of all rights
Tel:86-755-88869068
Working hours: Mon to Sat 8: 00 ~ 22: 00