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TPCP8002 MOSFET N-Channel 20V 9.1A PS-8 marking 8002 low on-resistance/fast switch/low threshold voltage/low gate driver
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | 9.1A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 10mΩ@ VGS = 4.5V, ID = 4.5A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.5~1.2V |
| 耗散功率Pd Power Dissipation | 840mW/0.84W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV) Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON-resistance : RDS (ON) = 7 mΩ (typ.) • High forward transfer admittance :|Yfs| = 36 S (typ.) • Low leakage current : IDSS = 10 μA (VDS = 20 V) • Enhancement mode : Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 0.2 mA) |
| 描述与应用 | 东芝场效应晶体管的硅N沟道MOS类型（U-MOS IV） 笔记本电脑应用 便携式设备的应用 •由于占地面积小，小而薄的包装 •低漏源导通电阻 ：RDS（ON）= 7mΩ（典型值） •高正向转移导纳 ：| YFS|= 36 S（典型值） •低漏电流 IDSS=10μA（VDS=20 V） •增强模式 ：VTH =0.5〜1.2 V（VDS=10V，ID= 0.2毫安） |
