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UMG5 NPN+NPN Complex Bipolar Digital Transistor 50V 70mA 150mW/0.15W SOT-353/UMT5/SC-88A/SC70-5 marking G5 switching inverting interface driver circuit
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
集电极连续输出电流IC Collector Current(IC) | 70mA |
Q1基极输入电阻R1 Input Resistance(R1) | 10KΩ/Ohm |
Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
Q1电阻比(R1/R2) Q1 Resistance Ratio | 0.213 |
Q2基极输入电阻R1 Input Resistance(R1) | 10KΩ/Ohm |
Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
Q2电阻比(R1/R2) Q2 Resistance Ratio | 0.213 |
直流电流增益hFE DC Current Gain(hFE) | |
截止频率fT Transtion Frequency(fT) | 250MHz |
耗散功率Pc Power Dissipation | 150mW/0.15W |
Description & Applications | Features •Emitter common (dual digital transistors) •Two DTC114Y chips in a EMT or UMT or SMT package. |
描述与应用 | 特点 •发射极普通的(双数字晶体管) •两个DTC114Y在EMT或UMT或SMT封装的芯片。 |