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UMZ7 NPN+PNP Complex Bipolar Transistor 15V/-15V 500mA/-500mA HEF=270~680 SOT-363/UMT6/SC-88 marking Z7 switch and digital circuit application
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 15V/-15V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 12V/-12V |
| 集电极连续输出电流IC Collector Current(IC) | 500mA/-500mA |
| 截止频率fT Transtion Frequency(fT) | 320MHz/260MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 270~680/270~680 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 90mV/-100mV |
| 耗散功率Pc Power Dissipation | 150mW |
| Description & Applications | Features • General purpose transistor (dual transistors) • Both a 2SA2018 chip and 2SC5585 chip in a EMT or UMT package. • Mounting possible with EMT3 or UMT3 automatic mounting machines. • Transistor elements are independent, eliminating interference. • Mounting cost and area can be cut in half. • Low VCE(sat) |
| 描述与应用 | 特点 •通用晶体管（双晶体管） •一个2SA2018芯片和2SC5585一个EMT或UMT包的芯片。 •安装EMT3或UMT3自动的安装机器可能。 •晶体管元素是独立的，消除干扰。 •安装成本和面积可减少一半。 •低VCE（SAT） |
