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UNRL21000ASO NPN Bipolar Digital Transistor (BRT) 50V 100mA/0.1A 47k ML4-N1/SC-103/0402 marking D
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
| 基极输入电阻R1 Input Resistance(R1) | 47KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | |
| 电阻比(R1/R2) Resistance Ratio | |
| 直流电流增益hFE DC Current Gain(hFE) | 160 |
| 截止频率fT Transtion Frequency(fT) | 150MHz |
| 耗散功率Pc Power Dissipation | 0.15W/150mW |
| Description & Applications | silicon NPN epitaxial planer type For digital circuit Features mold leadless type package allowing downsizing and thinning of the equipment and automatic insertion through the tape packing |
| 描述与应用 | 模具无铅型包装允许精简的设备和自动插入细化通过胶带包装 |
