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UPA1716 MOSFET P-Channel -30V 8A 16mohm SO8 marking A1716 high efficiencyDC/DCconverter low leakage current low on-resistance
| 最大源漏极电压Vds Drain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | -8A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 16mΩ@ VGS = -10V, ID = -4A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -1~-2.5V |
| 耗散功率Pd Power Dissipation | 2W |
| Description & Applications | DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES · Low on-resistance RDS(on)1 = 12.5 mW TYP. (VGS = –10 V, ID = –4 A) RDS(on)2 = 17.0 mW TYP. (VGS = –4.5 V, ID = –4 A) RDS(on)3 = 19.0 mW TYP. (VGS = –4.0 V, ID = –4 A) · Low Ciss : Ciss = 2100 pF TYP. · Built-in G-S protection diode · Small and surface mount package (Power SOP8) |
| 描述与应用 | 此产品是P沟道MOS场效应晶体管的设计的DC/ DC转换器和电源管理 笔记本电脑的应用。 特点 ·低导通电阻 RDS（on）1 =12.5 mW的典型。 （VGS=-10V，ID=-4） RDS（on）2 =17.0 mW的典型。 （VGS= -4.5 V，ID=-4） RDS（on）3=19.0 mW的典型。 （VGS= -4.0 V，ID=-4 A） ·低CISS：CISS=2100 PF TYP。 ·内置G-S的保护二极管 ·小和表面贴装封装（电源SOP8） |
