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UPA1716 MOSFET P-Channel -30V 8A 16mohm SO8 marking A1716 high efficiencyDC/DCconverter low leakage current low on-resistance

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-30V
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V
最大漏极电流Id
Drain Current
-8A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
16mΩ@ VGS = -10V, ID = -4A
开启电压Vgs(th)
Gate-Source Threshold Voltage
-1~-2.5V
耗散功率Pd
Power Dissipation
2W
Description & ApplicationsDESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES · Low on-resistance RDS(on)1 = 12.5 mW TYP. (VGS = –10 V, ID = –4 A) RDS(on)2 = 17.0 mW TYP. (VGS = –4.5 V, ID = –4 A) RDS(on)3 = 19.0 mW TYP. (VGS = –4.0 V, ID = –4 A) · Low Ciss : Ciss = 2100 pF TYP. · Built-in G-S protection diode · Small and surface mount package (Power SOP8)
描述与应用此产品是P沟道MOS场效应晶体管的设计的DC/ DC转换器和电源管理 笔记本电脑的应用。 特点 ·低导通电阻  RDS(on)1 =12.5 mW的典型。 (VGS=-10V,ID=-4)  RDS(on)2 =17.0 mW的典型。 (VGS= -4.5 V,ID=-4)  RDS(on)3=19.0 mW的典型。 (VGS= -4.0 V,ID=-4 A) ·低CISS:CISS=2100 PF TYP。 ·内置G-S的保护二极管 ·小和表面贴装封装(电源SOP8)
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