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UPA1952TE Complex FET -20V 2A SOT-163/SOT23-6 marking TP power switch 1.8V drive
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | 2A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 135mΩ@ VGS = -4.5V, ID = -1000mA |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.45~-1.5V |
| 耗散功率Pd Power Dissipation | 570mW/0.57W |
| Description & Applications | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The μPA1952 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 1.8 V drive available • Low on-state resistance RDS(on)1 = 135 mΩ MAX. (VGS = −4.5V, ID = −1.0 A) RDS(on)2 = 183 mΩ MAX. (VGS = −2.5 V, ID = −1.0 A) RDS(on)3 = 284 mΩ MAX. (VGS = −1.8 V, ID = −0.5 A) |
| 描述与应用 | P沟道MOS场效应晶体管说明 的的μPA1952是可驱动的开关装置 直接由1.8 V电源。 该器件具有低通态电阻和优良的 的开关特性，以及适合的应用，如 便携机的电源开关等。 特点 •1.8 V可驱动 •低通态电阻 RDS（on）1 =135mΩ最大。 （VGS=4.5V，ID= -1.0） RDS（on）= 183mΩ最大。 （VGS= -2.5 V，ID=-1.0 A） RDS（on）=284mΩ最大。 （VGS=-1.8 V，ID=-0.5 ） |
