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UPA621TT MOSFET N-Channel 20V 5A SOT-363/SC70-6/TSSOP6/SC-88 marking WB low on-resistance/fast switch/low threshold voltage/low gate driver
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | 5A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 50mΩ@ VGS = 4.5V, ID = 2.5A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.5~1.5V |
| 耗散功率Pd Power Dissipation | 200mW/0.2W |
| Description & Applications | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The μPA621TT is a switching device, which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V drive available • Low on-state resistance RDS(on)1 = 50 mΩ MAX. (VGS = 4.5 V, ID = 2.5 A) RDS(on)2 = 53 mΩ MAX. (VGS = 4.0 V, ID = 2.5 A) RDS(on)3 = 79 mΩ MAX. (VGS = 2.5 V, ID = 2.5 A) |
| 描述与应用 | N-沟道MOS场效应晶体管的开关 说明 的μPA621TT是一个开关装置，它可以直接由一个驱动 2.5 V电源。 该器件具有低导通电阻和出色的开关 特性，是适合应用，如电源开关 便携机等。 特点 •2.5 V驱动器可用 •低通态电阻 RDS（on）1=50mΩ最大。 （VGS= 4.5 V，ID=2.5 A） RDS（on）=53mΩ最大。 （VGS=4.0 V，ID=2.5 A） RDS（on）=79mΩ最大。 （VGS= 2.5V，ID=2.5 A） |
