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UPA811T NPN+NPN Complex Bipolar Transistor 20V 35mA 8GHZ HEF=80~160 SOT-363/SC-88 marking 44R switch and digital circuit application
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V(BR) CBO Collector-Base Voltage |
20v |
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V(BR) CEO Collector-Emitter Voltage |
10v |
| Collector Current(IC) | 35ma |
| Transtion Frequency(fT) | 8GHZ |
| DC Current Gain(hFE) | 80~160 |
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VCE (sat) Collector-Emitter Saturation Voltage |
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| Power Dissipation （Pd） | 200mw/0.2w |
| Description & Applications | HIGH-FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
• Built-in 2 Transistors (2 × 2SC4228)
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| Technical Documentation Download | Read Online |
