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XN6211 NPN+NPN Complex Bipolar Digital Transistor 50V 0.1A R1=R2=10KΩ HEF=35 300mW/0.3W SOT-163/SC-74/SOT23-6 marking 7Z switching inverting interface driver circuit
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V(BR) CBO Collector-Base Voltage |
50V |
|
V(BR) CEO Collector-Emitter Voltage |
50V |
| Collector Current(IC) | 100MA |
| Input Resistance(R1) | 10KΩ |
| Base-Emitter Resistance(R2) | 10KΩ |
| Base-Emitter Input Resistance Ratio (R1/R2) | 1 |
| DC Current Gain(hFE) | 35 |
| Transtion Frequency(fT) | 150mhz |
| Power Dissipation （Pd） | 300MW |
| Description & Applications | Silicon NPN epitaxial planar transistor
For switching/digital circuits
UNR2211 (UN2211) × 2
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| Technical Documentation Download | Read Online |
