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XP4878 Complex FET 50V 100mA/0.1A SOT-363/SC70-6 marking 7Y 2.5V drive

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Product description
最大源漏极电压Vds
Drain-Source Voltage
50V
最大栅源极电压Vgs(±)
Gate-Source Voltage
7V
最大漏极电流Id
Drain Current
100mA/0.1A
源漏极导通电阻Rds
Drain-Source On-State Resistance
12Ω@ VGS = 4.0V, ID = 10mA
开启电压Vgs(th)
Gate-Source Threshold Voltage
0.9~1.5V
耗散功率Pd
Power Dissipation
150mW/0.15W
Description & ApplicationsSilicon N-channel MOSFET For switching ■ Features • Allowing 2.5 V drive • Incorporating a built-in gate protection-diode • S-Mini type 6-pin package, reduction of the mounting area and assembly cost by one half
描述与应用硅N沟道MOSFET 对于开关 ■特点 •允许2.5 V驱动器 •集成了内置栅极保护二极管 •S-迷你型6引脚封装,安装面积减少 汇编一半的费用
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