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XP161A02A1PR MOSFET N-Channel 20V 3A SOT-89 marking 102 fast switch/low on-resistance
最大源漏极电压Vds Drain-Source Voltage | 20V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
最大漏极电流Id Drain Current | 3A |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.11Ω/Ohm @1.5A,4.5V |
开启电压Vgs(th) Gate-Source Threshold Voltage | 0.7V |
耗散功率Pd Power Dissipation | 2W |
Description & Applications | N-Channel Power MOS FET DMOS Structure Low On-State Resistance: 0.11Ω (max) Ultra High-Speed Switching SOT-89 Package |
描述与应用 | N沟道功率MOS FET DMOS结构 低导通电阻0.11(最大值) 超高速开关 SOT-89封装 |