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XP162A12A6PR MOSFET P-Channel -20V -2.5A 0.13ohm SOT-89 marking 21 ultra high-speed switch low on-resistance built-in gate protection diode
最大源漏极电压Vds Drain-Source Voltage | -20V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
最大漏极电流Id Drain Current | -2.5A |
源漏极导通电阻Rds Drain-Source On-State Resistance | 0.13Ω @1-1.5A,-4.5V |
开启电压Vgs(th) Gate-Source Threshold Voltage | -0.5--1.2V |
耗散功率Pd Power Dissipation | 2W |
Description & Applications | Low On-State Resistance : Rds(on) = 0.17Ω@ Vgs = -4.5V Rds(on) = 0.3Ω@ Vgs = -2.5V Ultra High-Speed Switching Dribing Voltage : -2.5V Gate Protect Diode Built-in P-Channel Power MOSFET DMOS Structure Small Package |
描述与应用 | 低导通电阻:RDS(ON)=0.17Ω@ VGS=-4.5V RDS(ON)=0.3Ω@ VGS=-2.5V 超高速开关 Dribing电压:-2.5V 内置栅极保护二极管 P沟道功率MOSFET DMOS结构式 小包装 |