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XP338300L NPN+PNP Complex Bipolar Transistor 50V/-50V 100mA/-100mA 80/30 SOT-353/SC-88A marking DN switch and digital circuit application
Q1 Collector-Base Voltage(VCBO) | 50V |
Q1Collector-Emitter Voltage(VCEO) | 50V |
Q1 Collector Current(IC) | 100MA |
Q2 Collector-Base Voltage(VCBO) | -50V |
Q2Collector-Emitter Voltage(VCEO) | -50V |
Q2Collector Current(IC) | -100MA |
Q1 Input Resistance(R1) | 47kΩ |
Q1Base-Emitter Resistance(R2) | 47kΩ |
Q1(R1/R2) Q1 Resistance Ratio | 1 |
Q2 Input Resistance(R1) | 4.7 kΩ |
Q2Base-Emitter Resistance(R2) | 10 kΩ |
Q2(R1/R2) Q2 Resistance Ratio | 0.47 |
DC Current Gain(hFE) Q1/Q2 | 80 / 30 |
Transtion Frequency(fT) Q1/Q2 | 150MHZ / 80MHZ |
Power Dissipation | 150MW |
Description & Applications |
Silicon NPN epitaxial planer transistor (Tr1)
Silicon PNP epitaxial planer transistor (Tr2)
For switching/digital circuits
UN1213+UN111F
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