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XP4316 NPN+PNP Transistors with built-in resistor 50V 0.1A HEF=160~460 R1=4.7KΩ SOT-363/SC-88 marking 7U switch and digital circuit application
Q1 Collector-Base Voltage(VCBO) | 50V |
Q1Collector-Emitter Voltage(VCEO) | 50V |
Q1 Collector Current(IC) | 100MA |
Q2 Collector-Base Voltage(VCBO) | -50V |
Q2Collector-Emitter Voltage(VCEO) | -50V |
Q2Collector Current(IC) | -100MA/-0.1A |
Q1 Input Resistance(R1) | 4.7KΩ |
Q1Base-Emitter Resistance(R2) | |
Q1(R1/R2) Q1 Resistance Ratio | |
Q2 Input Resistance(R1) | 4.7KΩ |
Q2Base-Emitter Resistance(R2) | |
Q2(R1/R2) Q2 Resistance Ratio | |
DC Current Gain(hFE) Q1/Q2 | 160~460 / 160~460 |
Transtion Frequency(fT) Q1/Q2 | 150MHZ / 80MHZ |
Power Dissipation | 150MW/0.15W |
Description & Applications |
Silicon NPN epitaxial planer transistor (Tr1)
Silicon PNP epitaxial planer transistor (Tr2)
Two elements incorporated into one package.
(Transistors with built-in resistor)
UNR1216(UN1216) + UNR1116(UN1116)
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