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XP6213 NPN+NPN Transistors with built-in resistor 50V 100mA R1=R2=47KΩ HEF=80 150mW/0.15W SOT-363/SC-88/SC70-6 marking 8W switching inverting interface driver circuit

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Product description

V(BR) CBO

Collector-Base Voltage

 50V

V(BR) CEO

Collector-Emitter Voltage

 50V
Collector Current(IC)  100MA
Input Resistance(R1)  47KΩ
Base-Emitter Resistance(R2)  47KΩ
Base-Emitter Input Resistance Ratio (R1/R2)  1
DC Current Gain(hFE) 80
Transtion Frequency(fT)  150MHZ
Power Dissipation (Pd)  150MW
Description & Applications  Silicon NPN epitaxial planer transistor
For switching/digital circuits
■ Features
● Two elements incorporated into one package.
(Transistors with built-in resistor)
● Reduction of the mounting area and assembly cost by one half.
■ Basic Part Number of Element
UNR1213(UN1213) × 2
Technical Documentation Download Read Online
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