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XP6213 NPN+NPN Transistors with built-in resistor 50V 100mA R1=R2=47KΩ HEF=80 150mW/0.15W SOT-363/SC-88/SC70-6 marking 8W switching inverting interface driver circuit
|
V(BR) CBO Collector-Base Voltage |
50V |
|
V(BR) CEO Collector-Emitter Voltage |
50V |
| Collector Current(IC) | 100MA |
| Input Resistance(R1) | 47KΩ |
| Base-Emitter Resistance(R2) | 47KΩ |
| Base-Emitter Input Resistance Ratio (R1/R2) | 1 |
| DC Current Gain(hFE) | 80 |
| Transtion Frequency(fT) | 150MHZ |
| Power Dissipation （Pd） | 150MW |
| Description & Applications | Silicon NPN epitaxial planer transistor
For switching/digital circuits
■ Features
● Two elements incorporated into one package.
(Transistors with built-in resistor)
● Reduction of the mounting area and assembly cost by one half.
■ Basic Part Number of Element
UNR1213(UN1213) × 2
|
| Technical Documentation Download | Read Online |
