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ZXT13N50DE6TA NPN Transistors(BJT) 190V 10mA 115MHz 450 175mV/0.175V SOT-163/SOT23-6 marking N50D switch
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 190V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 70V |
| 集电极连续输出电流IC Collector Current(IC) | 10mA |
| 截止频率fT Transtion Frequency(fT) | 115MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 450 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 175mV/0.175V |
| 耗散功率Pc Power Dissipation | 1.7W |
| Description & Applications | • 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR • Extremely Low Equivalent On Resistance • Extremely Low Saturation Voltage • hFEcharacterised up to 10A • IC=4A Continuous Collector Current • SOT23-6 package |
| 描述与应用 | •50V NPN硅低饱和开关晶体管 •极低的等效导通电阻 •极低的饱和电压 •hFEcharacterised的高达10A •IC= 4A的连续集电极电流 |
