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2SC4691J NPN Transistors(BJT) 40V 100mA/0.1A 450MHz 60~200 170mV/0.17V SOT-523/SC-75 marking 2Y fast switch
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 40V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 40V |
集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
截止频率fT Transtion Frequency(fT) | 450MHz |
直流电流增益hFE DC Current Gain(hFE) | 60~200 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 170mV/0.17V |
耗散功率Pc Power Dissipation | 125mW/0.125W |
Description & Applications | Features •Silicon NPN epitaxial planar type •For high-speed switching •Low collector-emitter saturation voltage VCE(sat) •SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing |
描述与应用 | 特点 •NPN硅外延平面型 •对于高速切换 •低集电极 - 发射极饱和电压VCE(sat) •SS-迷你型包装,使瘦身的设备和 通过自动插入磁带包装 |