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ECH8304 MOSFET P-Channel -12V -9.5A 39mohm Vth:-0.3~-1V ECH8 marking JF low on-resistance general switch 2.5V drive
| 最大源漏极电压Vds Drain-Source Voltage | -12V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 9V |
| 最大漏极电流Id Drain Current | -9.5A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 39mΩ@ VGS = -1.8V, ID = -1A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.3~-1V |
| 耗散功率Pd Power Dissipation | 1.6W |
| Description & Applications | P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • Ultrahigh-speed switcing. • 2.5V drive. |
| 描述与应用 | P-沟道硅MOSFET 通用开关设备应用 特点 •低导通电阻。 •超高速switcing。 •2.5V驱动。 |
