RJJ0102DQM-ELEHS MOSFET P-Channel -30V -2A 0.9ohm SOT-363 marking TG low on-resistance small package 4V drive|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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RJJ0102DQM-ELEHS MOSFET P-Channel -30V -2A 0.9ohm SOT-363 marking TG low on-resistance small package 4V drive

Model：RJJ0102DQM-ELEHS
Mark / screen / code / typing：TG
Manufacturer：
Date Code：07NOPB 07+ROHS
Package：SOT-363/SC70-6/CMFPAK - 6)
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	-30V
最大栅源极电压Vgs(±) Gate-Source Voltage	20V
最大漏极电流Id Drain Current	-2A
源漏极导通电阻Rds Drain-Source On-State Resistance	0.9Ω @-200mA,-10V
开启电压Vgs（th） Gate-Source Threshold Voltage	-1.0--2.5V
耗散功率Pd Power Dissipation	150mW/0.15W
Description & Applications	Features Low On-resistance. Small package (EMT3). 4V drive.
描述与应用	低导通电阻。小型封装（EMT3）。 4V驱动器。

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