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HAT2266H N MOSFET 60V 30A LFPAK 代码 2266 Low on-resistance Capable of 4.5 V gate drive
Drain-Source Voltage (Vds) | 60V |
Vgs(±) Gate-Source Voltage |
20V |
Drain Current (Id) | 30A |
Drain-Source On-State (Rds) | RDS(on) = 9.2 mΩ typ. (at VGS = 10 V)
|
Vgs (th) Gate-Source Threshold Voltage |
|
Power dissipation (Pd) | 23W |
Description & Applications | Silicon N Channel Power MOS FET
Power Switching
• High speed switching
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
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