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UFZT788BTC PNP transistors(BJT) -15V -3A 100MHz 500~1500 -500mV/-0.5V SOT-223 marking FZT788B medium power high gain
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -15V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −15V |
集电极连续输出电流IC Collector Current(IC) | -3A |
截止频率fT Transtion Frequency(fT) | 100MHz |
直流电流增益hFE DC Current Gain(hFE) | 500~1500 |
管压降VCE(sat) Collector-Emitter SaturationVoltage | −500mV/-0.5V |
耗散功率Pc PoWer Dissipation | 2W |
Description & Applications | SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FEATURES * Low equivalent on-resistance; APPLICATIONS * Battery powered circuits COMPLEMENTARY TYPE FZT688B |
描述与应用 | SOT223 PNP硅平面中功率高增益晶体管 特点 *低等效导通电阻; 应用 *电池供电电路 互补型FZT688B |