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KTC812T-B NPN+NPN Complex Bipolar Transistor 50V 0.3A HEF=350~1200 SOT-163/TS6 marking MB switch and digital circuit application
|
V(BR) CBO Collector-Base Voltage |
50V |
|
V(BR) CEO Collector-Emitter Voltage |
20V |
| Collector Current(IC) | 300MA/0.3A |
| Transtion Frequency(fT) | 30MHZ |
| DC Current Gain(hFE) | 350~1200 |
|
VCE (sat) Collector-Emitter Saturation Voltage |
0.3V |
| Power Dissipation （Pd） | 0.9W |
| Description & Applications | FOR MUTING AND SWITCHING APPLICATION.
FEATURES
High Emitter-Base Voltage : VEBO=25V(Min.)
High Reverse hFE
: Reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA)
Low on Resistance : RON=1 (Typ.), (IB=5mA)
|
| Technical Documentation Download | Read Online |
