SI5855DC complex FET MOSFET+schottky diode -20V -2.7A 1A 0.375V 1206-8/vs-8 marking jb|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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SI5855DC complex FET MOSFET+schottky diode -20V -2.7A 1A 0.375V 1206-8/vs-8 marking jb

Model：SI5855DC
Mark / screen / code / typing：jb
Manufacturer：
Date Code：05 06+9KMROHS
Package：1206-8/vs-8/SOT23-8
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	P沟道 P-Channel
最大栅源极电压Vgs(±) Gate-Source Voltage	-20V
最大漏极电流Id Drain Current	-8V
源漏极导通电阻Rds Drain-Source On-State Resistance	-2.7A
开启电压Vgs（th） Gate-Source Threshold Voltage	110mΩ@ VGS =-4.5V, ID =-2.7A
耗散功率Pd Power Dissipation	-0.45~-1.0V
Description & Applications	肖特基二极管SBD Schottky Barrier Diodes
描述与应用	20V

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