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SI1031R MOSFET P-Channel -20V -150mA 8ohm SOT-523 marking AOH low on-resistance power MOSFET 2000VESD protection
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 6V |
| 最大漏极电流Id Drain Current | -0.15A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 8Ω @-150mA,-4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.4--1.2V |
| 耗散功率Pd Power Dissipation | 280mW/0.28W |
| Description & Applications | FEATURES • Halogen-free Option Available • High-Side Switching • Low On-Resistance: 8 Ω • Low Threshold: 0.9 V (typ.) • Fast Switching Speed: 45 ns • TrenchFET Power MOSFETs: 1.5-V Rated • ESD Protected: 2000 V |
| 描述与应用 | •无卤股权 •高边开关 •低导通电阻：8Ω •低阈值：0.9V（典型值） •开关速度快：45 ns的 •的TrenchFET 功率MOSFET：1.5 V额定 •ESD保护：2000 V |
