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HM3669 NPN Transistors(BJT) 80V 2A 100MHz 300 500mV/0.5V SOT-89 marking H3669 power amplifier power supply switch
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 80V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 80V |
| 集电极连续输出电流IC Collector Current(IC) | 2A |
| 截止频率fT Transtion Frequency(fT) | 100MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 300 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 500mV/0.5V |
| 耗散功率Pc Power Dissipation | 1W |
| Description & Applications | NPN EPITAXIAL PLANAR TRANSISTOR The HM3669 is designed for using in power amplifier applications, power switching application. |
| 描述与应用 | NPN外延平面晶体管 HM3669是专为使用功率放大器应用， 电源开关应用。 |
