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UZXT10N15DE6TA NPN Transistors(BJT) 15V 4A 120MHz 450 230mV/0.23V SOT-163/SOT23-6 marking S17
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 15V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 15V |
集电极连续输出电流IC Collector Current(IC) | 4A |
截止频率fT Transtion Frequency(fT) | 120MHz |
直流电流增益hFE DC Current Gain(hFE) | 450 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 230mV/0.23V |
耗散功率Pc Power Dissipation | 1.7W |
Description & Applications | • 15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR • Low Equivalent On Resistance • Extremely Low Saturation Voltage • hFE characterised up to 12A • IC=4A Continuous Collector Current • SOT23-6 package |
描述与应用 | •15V NPN硅低饱和开关晶体管 •低等效电阻 •极低的饱和电压 •放大特点高达12A •IC= 4A的连续集电极电流 |