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2SA1655 PNP transistors（BJT） -50V -100mA/-0.1A 250MHz 30 -100mV/-0.1V SOT-23/CP marking AS bias resistor
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −50V |
| 集电极连续输出电流IC Collector Current(IC) | −100mA/-0.1A |
| 截止频率fT Transtion Frequency(fT) | 250MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 30 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -100mV/-0.1V |
| 耗散功率Pc PoWer Dissipation | 200mW/0.2W |
| Description & Applications | silicon PNP epitaxial type high voltage and high current； Applications · Swicthing circuits, inverter circuits, interface circuits,driver circuits. Features · On-chip bias resistance : R1=4.7kΩ, R2=4.7kΩ. |
| 描述与应用 | 硅PNP外延型 高电压和高电流; 应用 ·Swicthing电路，逆变器电路，接口电路，驱动器电路。 特点 ·片上偏置电阻：R1=4.7kΩ上，R2=4.7kΩ的。 |
