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2N3904S NPN Transistors(BJT) 60V 200mA/0.2A 300MHz 100~300 300mV/0.3V SOT-23/SC-59 marking ZC switch
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 60V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 40V |
集电极连续输出电流IC Collector Current(IC) | 200mA/0.2A |
截止频率fT Transtion Frequency(fT) | 300MHz |
直流电流增益hFE DC Current Gain(hFE) | 100~300 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 300mV/0.3V |
耗散功率Pc Power Dissipation | 350mW/0.35W |
Description & Applications | NPN Epitaxial Planar Silicon Transistor General purpose applications Switching applications Features Low leakage current Excellent DC current gain linearity. Low saturation voltage Low collector output capacitance. Complementary to 2N3906S |
描述与应用 | NPN平面外延硅晶体管 一般用途 开关应用 特点 低漏电流 优秀DC电流增益线性度。 低饱和电压 低集电极输出电容。 互补型2N3906S |