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RK7002A MOSFET N-Channel 60V 300mA/0.3A SOT-23/SC-59 marking RKS fast switch/low RDS
| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 300mA/0.3A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 1.0Ω/Ohm @300mA,10v |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.0-2.5V |
| 耗散功率Pd Power Dissipation | 200mW/0.2W |
| Description & Applications | 4V Drive Nch MOS FET Silicon N-channel MOS FET transistor Features Low on-resistance. Fast switching speed. Wide SOA (safe operating area). Low-voltage drive. Easily designed drive circuits. Easy to use in parallel. |
| 描述与应用 | 4V驱动N沟道MOS FET 硅N沟道MOS FET晶体管 低导通电阻。 开关速度快。 宽安全工作区（SOA） 低电压驱动。 轻松驱动电路设计。 易于并联使用 |
