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2SD1623S NPN Transistors(BJT) 60V 2A 150MHz 140~280 150mV/0.15V SOT-89/PCP marking DFS high current switch amplifier
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 60V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
集电极连续输出电流IC Collector Current(IC) | 2A |
截止频率fT Transtion Frequency(fT) | 150MHz |
直流电流增益hFE DC Current Gain(hFE) | 140~280 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 150mV/0.15V |
耗散功率Pc Power Dissipation | 500mW/0.5W |
Description & Applications | Silicon NPN epitaxial planer type darlington high current switching amplification Features * large current capacity and wide ASO * Low collector to emitter saturation voltage VCE(sat) * fast switch speed * adoption of FBET,MBIT processes |
描述与应用 | NPN硅外延平面型达林顿 高电流开关放大 特点 *大电流容量,广ASO *低集电极到发射极饱和电压VCE(SAT) *开关速度快 *采用的FBET,MBIT进程 |