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2SB1219A-Q PNP transistors(BJT) -30V -500mA/-0.5A 200MHz 85~170 -600mV/-0.6V SOT-323/SC-70 marking DQ amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-30V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−25V
集电极连续输出电流IC
Collector Current(IC)
−500mA/-0.5A
截止频率fT
Transtion Frequency(fT)
200MHz
直流电流增益hFE
DC Current Gain(hFE)
85~170
管压降VCE(sat)
Collector-Emitter SaturationVoltage
−600mV/-0.6V
耗散功率Pc
PoWer Dissipation
150mW/0.15W
Description & ApplicationsPNP Silicon epitaxial planar transistor For general amplification Complementary to 2SD1820A Features Large collector current IC S-Mini type package
描述与应用PNP硅外延平面晶体管 对于一般的放大 补充型2SD1820A 特点 大集电极电流IC S-迷你型封装
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