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EMF23 Complex Bipolar Digital Transistor -60V -150mA HEF=180~390 0.15W SOT-563/EMT6 marking F23 switching inverting interface driver circuit
| Collector-Base Voltage(VCBO) Q1/Q2 | -60V/50V |
| Collector-Emitter Voltage(VCEO) Q1/Q2 | -50V/50V |
| Collector Current(IC) Q1/Q2 | -150mA/100mA |
| Q1 Input Resistance(R1) | |
| Q1 Base-Emitter Resistance(R2) | |
| Q1(R1/R2) Q1 Resistance Ratio | |
| Q2 Input Resistance(R1) | 10KΩ/Ohm |
| Q2Base-Emitter Resistance(R2) | 10KΩ/Ohm |
| (R1/R2) Q2 Resistance Ratio | 1 |
| Q1 DC Current Gain(hFE) | 180~390 |
| Transtion Frequency(fT) | 140MHz/250MHz |
| Pc Power Dissipation | 150mW/0.15W |
| Description & Applications | Features •Power management (dual transistors) •2SA1774and DTC114E are housed independently in a EMT6 or UMT6 package. . •Power switching circuit in a single package. •Mounting cost and area can be cut in half. |
| 描述与应用 | 特点 •电源管理（双晶体管） •2SA1774and DTC114E被安置独立在EMT6 UMT6包装 •电源开关电路，在单一封装中。 •安装成本和面积可减少一半 |
