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UP04601G08SO NPN+PNP Complex Bipolar Transistor 60V/-60V 100mA/-100mA HEF=180~390 SOT-563 marking 5C switch and digital circuit application
| Collector-Base Voltage(VCBO) | 60V/-60V |
| Collector-Emitter Voltage(VCEO) | 50V/-50V |
| Collector Current(IC) | 100mA/-100mA |
| Transtion Frequency(fT) | 150MHz/80MHz |
| DC Current Gain(hFE) | 180~390/180~390 |
| Collector-Emitter Saturation Voltage | 100mV/-300mV |
| Power Dissipation | 125mW |
| Description & Applications | Features •Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) •Two elements incorporated into one package (Each transistor is separated) •Reduction of the mounting area and assembly cost by one half •For general amplification |
| 描述与应用 | 特点 •NPN硅外延平面型（TR1） PNP硅外延平面型（TR2） •两个要素纳入一个包（每个晶体管分离） •减少安装面积和装配成本的一半 •对于一般的放大 |
