Scavenging browsing Mobile
Hot Search： SSM3K35MFV SSM3J36MFV 2SK3376TT-B
2SA2154MFV-GR PNP transistors（BJT） -50V -100mA/-0.1A 80MHz 200~400 -300mV/-0.3V sot-723/VESM marking PG general amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −50V |
| 集电极连续输出电流IC Collector Current(IC) | −100mA/-0.1A |
| 截止频率fT Transtion Frequency(fT) | 80MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 200~400 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -300mV/-0.3V |
| 耗散功率Pc PoWer Dissipation | 50mW |
| Description & Applications | PNP Silicon epitaxial planar type General-Purpose Amplifier Applications Features • High voltage and high current • Excellent hFE linearity • High hFE • Complementary to 2SC6026 • Lead (Pb) free |
| 描述与应用 | PNP硅外延平面型 通用放大器应用 特点 •高电压和高电流 •优秀的HFE线性 •高HFE •互补型2SC6026 •无铅（Pb） |
