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MJD210-TF PNP transistors(BJT) -40V -5A 65MHz 45~180 -750mV/-0.75V TO-252/DPAK marking MJD210 high DC current gain
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -40V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −25V |
集电极连续输出电流IC Collector Current(IC) | -5A |
截止频率fT Transtion Frequency(fT) | 65MHz |
直流电流增益hFE DC Current Gain(hFE) | 45~180 |
管压降VCE(sat) Collector-Emitter SaturationVoltage | -750mV/-0.75V |
耗散功率Pc PoWer Dissipation | 1.4W |
Description & Applications | PNP epitaxial planar transistor D-PAK for Surface Mount Applications • High DC Current Gain Feature • Low Collector Emitter Saturation Voltage • Lead Formed for Surface Mount Applications • Straight Lead |
描述与应用 | PNP外延平面晶体管 D-PAK表面贴装应用 •高直流电流增益 特点 •低集电极发射极饱和电压 •铅形成表面贴装应用 •直铅 |