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MJD210-TF PNP transistors(BJT) -40V -5A 65MHz 45~180 -750mV/-0.75V TO-252/DPAK marking MJD210 high DC current gain

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-40V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−25V
集电极连续输出电流IC
Collector Current(IC)
-5A
截止频率fT
Transtion Frequency(fT)
65MHz
直流电流增益hFE
DC Current Gain(hFE)
45~180
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-750mV/-0.75V
耗散功率Pc
PoWer Dissipation
1.4W
Description & ApplicationsPNP epitaxial planar transistor D-PAK for Surface Mount Applications • High DC Current Gain Feature • Low Collector Emitter Saturation Voltage • Lead Formed for Surface Mount Applications • Straight Lead
描述与应用PNP外延平面晶体管 D-PAK表面贴装应用 •高直流电流增益 特点 •低集电极发射极饱和电压 •铅形成表面贴装应用 •直铅
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