Scavenging browsing Mobile
Hot Search： SSM3K35MFV SSM3J36MFV 2SK3376TT-B
EMC3DXV5T5 NPN+PNP Complex Bipolar Digital Transistor -50V/50V -100mA/100mA 60 500mW/0.5W SOT-563 marking U3K switching inverting interface driver circuit
| Collector-Base Voltage(VCBO) Q1/Q2 | -50V/50V |
| Collector-Emitter Voltage(VCEO) Q1/Q2 | -50V/50V |
| Collector Current(IC) Q1/Q2 | -100mA/100mA |
| Input Resistance(R1) | 10KΩ/Ohm |
| Base-Emitter Resistance(R2) | 10KΩ/Ohm |
| (R1/R2) Q1 Resistance Ratio | 1 |
| Input Resistance(R1) | 10KΩ/Ohm |
| Base-Emitter Resistance(R2) | 10KΩ/Ohm |
| (R1/R2) Q2 Resistance Ratio | 1 |
| DC Current Gain(hFE) | 60 |
| Transtion Frequency(fT) | |
| Power Dissipation | 500mW/0.5W |
| Description & Applications | Features •Dual Common Base−Collector Bias Resistor Transistors •NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network •Simplifies Circuit Design •Reduces Board Space •Reduces Component Count •These are Pb−Free Devices |
| 描述与应用 | 特点 •双共基极 - 集电极偏置电阻晶体管 •NPN和PNP硅表面贴装晶体管与单片偏置电阻网络 •简化电路设计吗？ •缩小板级空间 •减少元件数量 •这些都是Pb-Free设备 |
