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ES6U42 complex FET MOSFET+schottky diode -20V -1A 500mA/0.5A 0.52V SOT-563/WEMT6 marking U42 high-speed switch/low drive voltage
最大源漏极电压Vds Drain-Source Voltage | P沟道 P-Channel |
最大栅源极电压Vgs(±) Gate-Source Voltage | -20V |
最大漏极电流Id Drain Current | -12V |
源漏极导通电阻Rds Drain-Source On-State Resistance | -1A |
开启电压Vgs(th) Gate-Source Threshold Voltage | 390mΩ@ VGS =-4.5V, ID =-1A |
耗散功率Pd Power Dissipation | -0.7~-2.0V |
Description & Applications | 肖特基二极管SBD Schottky Barrier Diodes |
描述与应用 | 20V |