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ISA1603AMI PNP transistors(BJT) -60V -200mA/-0.2A 200MHz 120~270 -300mV/-0.3V SOT-323/SC-70 marking TQ Low-Frequency General-Purpose Amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−50V
集电极连续输出电流IC
Collector Current(IC)
−200mA/-0.2A
截止频率fT
Transtion Frequency(fT)
200MHz
直流电流增益hFE
DC Current Gain(hFE)
120~270
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-300mV/-0.3V
耗散功率Pc
PoWer Dissipation
150mW/0.15W
Description & ApplicationsPNP epitaxial planar transistor FOR LOW FREQUENCY AMPLIFY APPLICATION FEATURE ●Small collector to emitter saturation voltage. ●Excellent linearity of DC forward gain. ●Super mini package for easy mounting APPLICATION For Hybrid IC,small type machine low frequency voltage Amplify application.
描述与应用PNP外延平面晶体管 对于低频放大应用 特写 ●小集电极到发射极饱和电压。 ●直流前锋出色的线性度获得。 ●超小型封装,便于安装 应用 对于混合集成电路,小型机低频电压放大应用。
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