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ISA1603AMI PNP transistors（BJT） -60V -200mA/-0.2A 200MHz 120~270 -300mV/-0.3V SOT-323/SC-70 marking TQ Low-Frequency General-Purpose Amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −50V |
| 集电极连续输出电流IC Collector Current(IC) | −200mA/-0.2A |
| 截止频率fT Transtion Frequency(fT) | 200MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 120~270 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -300mV/-0.3V |
| 耗散功率Pc PoWer Dissipation | 150mW/0.15W |
| Description & Applications | PNP epitaxial planar transistor FOR LOW FREQUENCY AMPLIFY APPLICATION FEATURE ●Small collector to emitter saturation voltage. ●Excellent linearity of DC forward gain. ●Super mini package for easy mounting APPLICATION For Hybrid IC,small type machine low frequency voltage Amplify application. |
| 描述与应用 | PNP外延平面晶体管 对于低频放大应用 特写 ●小集电极到发射极饱和电压。 ●直流前锋出色的线性度获得。 ●超小型封装，便于安装 应用 对于混合集成电路，小型机低频电压放大应用。 |
