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RJU002N06 MOSFET N-Channel 60V 2A SOT-89 marking ML power supply/ converter/bridge circuit
| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | 2A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.24mA,@3A,4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.8-1.5V |
| 耗散功率Pd Power Dissipation | 500mW/0.5W |
| Description & Applications | 2.5V Drive Nch MOS FET Silicon N-channel MOS FET Features Low On-resistance. Low voltage drive (2.5V drive) |
| 描述与应用 | 2.5V驱动N沟道MOS FET 硅N沟道MOS FET 低导通电阻。 低电压驱动（2.5V驱动器） |
