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RN1111F NPN Bipolar Digital Transistor (BRT) 50V 100mA/0.1A 10k SOT-523/ESM marking XM switch inverting circuit interface circuit and driver circuit
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
| 基极输入电阻R1 Input Resistance(R1) | 10KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | |
| 电阻比(R1/R2) Resistance Ratio | |
| 直流电流增益hFE DC Current Gain(hFE) | 120 |
| 截止频率fT Transtion Frequency(fT) | 250MHz |
| 耗散功率Pc Power Dissipation | 0.1W/100mW |
| Description & Applications | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2110F, RN2111F |
| 描述与应用 | 开关，逆变电路，接口电路 和驱动器电路应用 借助内置的偏置电阻 简化电路设计 数量减少了零件和制造工艺 互补RN2110F，RN2111F的 |
