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UP0121M00L NPN+NPN Complex Bipolar Transistor 50V 100mA HEF=80 R1=2.2KΩ R2=47KΩ SOT-563 marking EM switch and digital circuit application
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA |
| Q1基极输入电阻R1 Input Resistance(R1) | 2.2KΩ |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ |
| Q1电阻比(R1/R2) Q1 Resistance Ratio | 0.047 |
| Q2基极输入电阻R1 Input Resistance(R1) | 2.2KΩ |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ |
| Q2电阻比(R1/R2) Q2 Resistance Ratio | 0.047 |
| 直流电流增益hFE DC Current Gain(hFE) | 80 |
| 截止频率fT Transtion Frequency(fT) | 150MHz |
| 耗散功率Pc Power Dissipation | 125mW |
| Description & Applications | Features • Silicon NPN epitaxial planar type • Two elements incorporated into one package (transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half. |
