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BSS192P MOSFET P-Channel -240V -150mA 10ohm SOT-89 marking KC small signal transistor
| 最大源漏极电压Vds Drain-Source Voltage | -240V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | -0.15A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 10Ω @-150mA,-10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.8--2.8V |
| 耗散功率Pd Power Dissipation | 1W |
| Description & Applications | SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V |
| 描述与应用 | SIPMOS®小信号晶体管 •P沟道 •增强模式 •逻辑电平 •VGS（TH）=-0.8-2.0 V |
