SI2333DS-T1 MOSFET P-Channel -20V -4.7A 0.031ohm SOT-23 marking E3 power MOSFET|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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SI2333DS-T1 MOSFET P-Channel -20V -4.7A 0.031ohm SOT-23 marking E3 power MOSFET

Model：SI2333DS-T1
Mark / screen / code / typing：E3
Manufacturer：
Date Code：08NOPB 08NOPB
Package：SOT-23/SC-59
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	-20V
最大栅源极电压Vgs(±) Gate-Source Voltage	8V
最大漏极电流Id Drain Current	-4.7A
源漏极导通电阻Rds Drain-Source On-State Resistance	0.031Ω @-4.7A,-4.5V
开启电压Vgs（th） Gate-Source Threshold Voltage	-0.4V-1.0V
耗散功率Pd Power Dissipation	1.25W
Description & Applications	FEATURES TrenchFET Power MOSFET
描述与应用	功率MOSFET

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