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2SK210-BL JFET N-Channel 18v 12~24mA SOT-23 marking YL low noise coefficient：NF=1.8dB
| 最大源漏极电压Vds Drain-Source Voltage | 18v |
| 栅源极击穿电压V(BR)GS Gate-Source Voltage | -18v |
| 漏极电流(Vgs=0V)IDSS Drain Current | 12~24ma |
| 关断电压Vgs(off) Gate-Source Cut-off Voltage | -1.2~-3v |
| 耗散功率Pd Power Dissipation | 100mW/0.1W |
| Description & Applications | •Silicon N-Channel Junction FET High Power Gain :Gps=24dB(Typ.) (f=100MHz) Low Noise Figure :NF = 1.8dB(Typ.) (f=100MHz) High Forward Transfer Admitance : |Yfs|: |Yfs| = 7 mS (typ.) (f=1kHz) |
| 描述与应用 | •硅N沟道结型场效应管 高功率增益：GPS =24分贝（典型值）（F =100MHz时） 低噪声系数：NF=1.8分贝（典型值）（F =100MHz时） |
