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2SK210-BL JFET N-Channel 18v 12~24mA SOT-23 marking YL low noise coefficient：NF=1.8dB

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Product description
最大源漏极电压Vds
Drain-Source Voltage		18v
栅源极击穿电压V(BR)GS
Gate-Source Voltage		 -18v
漏极电流(Vgs=0V)IDSS
Drain Current		12~24ma
关断电压Vgs(off)
Gate-Source Cut-off Voltage		 -1.2~-3v
耗散功率Pd
Power Dissipation		100mW/0.1W
Description & Applications•Silicon N-Channel Junction FET High Power Gain :Gps=24dB(Typ.) (f=100MHz) Low Noise Figure :NF = 1.8dB(Typ.) (f=100MHz) High Forward Transfer Admitance : |Yfs|: |Yfs| = 7 mS (typ.) (f=1kHz)
描述与应用•硅N沟道结型场效应管 高功率增益：GPS =24分贝（典型值）（F =100MHz时） 低噪声系数：NF=1.8分贝（典型值）（F =100MHz时）
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