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MTM78E2B0LBFTR-ND Complex FET 20V 4A WMini8-F1 marking 5A battery protection 2.85V drive
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | 4A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 36mΩ@ VGS =2.5V, ID =1A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.4~1.3V |
| 耗散功率Pd Power Dissipation | 700mW/0.7W |
| Description & Applications | For lithium-ion secondary battery protection circuit Feature Dual P-channel MOS FET in one package 2.85V drive Low drain-source ON resistance Eco-friendly Halogen-free package |
| 描述与应用 | 对于锂离子二次电池的保护电路 特点 双P沟道MOS场效应管在一个封装中 2.85V驱动 低漏源导通电阻 环保型无卤素封装 |
