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BC858BLT1G PNP transistors（BJT） -30V -100mA/-0.1A 100MHz 220~475 -650mV/-0.65V SOT-23/SC-59 marking 3K
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | −30V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −30V |
| 集电极连续输出电流IC Collector Current(IC) | −100mA/-0.1A |
| 截止频率fT Transtion Frequency(fT) | 100MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 220~475 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | −650mV/-0.65V |
| 耗散功率Pc PoWer Dissipation | 225mW/0.225W |
| Description & Applications | General Purpose Transistors PNP Silicon Features • Pb−Free Packages are Available |
| 描述与应用 | 通用晶体管 PNP硅 特点 •无铅包可用 |
