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2SD1621R NPN Transistors(BJT) 30V 2A 150MHz 100~200 180mV/0.18V SOT-89/PCP marking DDR high current switch amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 30V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 25V |
| 集电极连续输出电流IC Collector Current(IC) | 2A |
| 截止频率fT Transtion Frequency(fT) | 150MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 100~200 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 180mV/0.18V |
| 耗散功率Pc Power Dissipation | 500mW/0.5W |
| Description & Applications | Silicon NPN epitaxial planer type darlington high current switching amplification Features * large current capacity and wide ASO * Low collector to emitter saturation voltage VCE(sat) * fast switch speed * adoption of FBET，MBIT processes |
| 描述与应用 | NPN硅外延平面型达林顿 高电流开关放大 特点 *大电流容量，广ASO *低集电极到发射极饱和电压VCE（SAT） *开关速度快 *采用的FBET，MBIT进程 |
