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KTK211GR JFET N-Channel 18v 1~15mA SOT-23 marking KG high frequency

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Product description
最大源漏极电压Vds
Drain-Source Voltage
18v
栅源极击穿电压V(BR)GS
Gate-Source Voltage
-18v
漏极电流(Vgs=0V)IDSS
Drain Current
1~15ma
关断电压Vgs(off)
Gate-Source Cut-off Voltage
-0.4~-4v
耗散功率Pd
Power Dissipation
150mW/0.15W
Description & Applications•Silicon N-Channel Junction FET
描述与应用•硅N沟道结型场效应管
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