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2SC4357 NPN Transistors(BJT) 60V 2A 80MHz 150~300 200mV/0.2V SOT-89 marking LE high current drive application amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
60V |
| 集电极连续输出电流IC Collector Current(IC) |
2A |
| 截止频率fT Transtion Frequency(fT) |
80MHz |
| 直流电流增益hFE DC Current Gain(hFE) |
150~300 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage |
200mV/0.2V |
| 耗散功率Pc Power Dissipation |
500mW/0.5W |
| Description & Applications | small signal transistor FOR HIGH CURRENT DRIVE AMPLIFY APPLICATION High voltage High collector current Low collector to emitter saturation voltage High collector dissipation |
| 描述与应用 | 小信号晶体管 用于高电流驱动应用放大 高压 高集电极电流 集电极到发射极饱和电压低 高集电极耗散 |
